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D45C1 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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D45C1 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon PNP Power Transistors D45C Series CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT D45C2,3,5,6,8,9,11,12 IC=-1A ;IB=-50mA VCEsat Collector-emitter saturation voltage D45C1,4,7,10 IC=-1A ;IB=-0.1A -0.5 V VBEsat Base-emitter saturation voltage IC=-1A ;IB=-0.1A -1.3 V ICES Collector cut-off current VCE=Rated VCES -100 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 μA D45C2,3,5,6,8,9,11,12 40 120 hFE-1 DC current gain D45C1,4,7,10 IC=-0.2A ; VCE=-1V 25 D45C1,4,7,10 10 D45C2,5,8,11 IC=-1A ; VCE=-1V 20 hFE-2 DC current gain D45C3,6,9,12 IC=-2A ; VCE=-1V 20 fT Transition frequency IC=-20mA;VCE=-4V; f=1.0MHz 40 MHz Switching times tr Rise time 0.2 μs ts Storage time 0.6 μs tf Fall time IC=-1.0A; VCC=-20V IB1=-IB2=-0.1A 0.3 μs |
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