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MJ3040 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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MJ3040 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor MJ3040 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 300 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC=2.5A; IB=50mA 2.2 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC=5A; IB=400mA 2.5 V VBE(on) Base-Emitter On voltage IC=2.5A ; VCE=5V 2.5 V ICBO Collector Cutoff current VCE=400V; IE= 0 VCE=400V; IE= 0, TC=100℃ 1.0 5.0 mA IEBO Emitter Cut-off current VEB= 5V; IC= 0 40 mA hFE-1 DC Current Gain IC=2.5A ; VCE=5V 100 hFE-2 DC Current Gain IC=5A ; VCE=5V 25 isc Website:www.iscsemi.cn 2 |
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