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PMD10K80 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited

부품명 PMD10K80
상세설명  isc Silicon NPN Darlingtion Power Transistor
PDF  2 Pages
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제조업체  ISC [Inchange Semiconductor Company Limited]
홈페이지  http://www.iscsemi.cn
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PMD10K80 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlingtion Power Transistor
PMD10K80
DESCRIPTION
·High DC current gain
·Collector-Emitter Sustaining Voltage-
VCEO(SUS)= 80V(Min)
·Complement to type PMD11K80
APPLICATIONS
·Designed for general purpose amplifier and low frequency
switching applications
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current -Continuous
12
A
ICP
Collector Current-Peak
20
A
IB
B
Base Current
0.2
A
PC
Collector Power Dissipation@TC=25℃
150
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
ThermalResistance, Junction to Case
1.17
℃/W
isc Website：www.iscsemi.cn


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