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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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PMD13K80 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited |
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PMD13K80 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD13K80 DESCRIPTION ·High DC current gain ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -80V(Min) ·Complement to type PMD12K80 APPLICATIONS ·Designed for general purpose amplifier and DC motor control applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current -Continuous -8 A ICP Collector Current-Peak -16 A IB B Base Current -0.12 A PC Collector Power Dissipation@TC=50℃ 100 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c ThermalResistance, Junction to Case 1.5 ℃/W isc Website：www.iscsemi.cn |
유사한 부품 번호 - PMD13K80 |
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유사한 설명 - PMD13K80 |
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