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S391D 데이터시트(PDF) 2 Page - Vishay Siliconix |
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S391D 데이터시트(HTML) 2 Page - Vishay Siliconix |
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2 / 4 page ![]() www.vishay.com 2 Document Number 85569 Rev. 1.6, 16-Jul-10 S391D Vishay Semiconductors For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Electrical Characteristics Tamb = 25 °C, unless otherwise specified Typical Characteristics Tamb = 25 °C, unless otherwise specified Package Dimensions in millimeters (inches): MiniMELF SOD-80 Parameter Test condition Symbol Min Typ. Max Unit Forward voltage IF = 20 mA VF 1000 mV Reverse current VR = 30 V IR 50 nA Diode capacitance f = 100 MHz, VR = 0 CD 0.5 pF Differential forward resistance f = 100 MHz, IF = 1.5 mA rf 40 60 Ω Reverse impedance f = 100 MHz, VR = 0 zr 5k Ω Minority carrier lifetime IF = 10 mA, IR = 10 mA τ 4 μs Figure 1. Forward Current vs. Forward Voltage 0 0.4 0.8 1.2 1.6 0.01 0.1 1 10 100 2.0 95 9735 VF - Forward Voltage (V) Tamb = 25 °C Scattering Limit Cathode indification 0.47 (0.019) max. 2.5 (0.098) max. 1.25 (0.49) min. 3.7 (0.146) 3.3 (0.130) 5 (0.197) ref. Foot print recommendation: * * The gap between plug and glass can be either on cathode or anode side Document no.:6.560-5005.01-4 Rev. 8 - Date: 07.June.2006 96 12070 |
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