SD103CWS-V-G datasheet(2/4 Pages) VISHAY

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Document Number 81142

Rev. 1.1, 13-May-11

SD103AWS-V-G, SD103BWS-V-G, SD103CWS-V-G

Vishay Semiconductors

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Typical Characteristics

Tamb = 25 °C unless otherwise specified

Parameter

Test condition

Part

Symbol

Min.

Typ.

Max.

Unit

Leakage current

VR = 30 V

SD103AWS-V-G

5µA

VR = 20 V

SD103BWS-V-G

5µA

VR = 10 V

SD103CWS-V-G

5µA

Forward voltage drop

IF = 20 mA

370

IF = 200 mA

600

Diode capacitance

VR = 0 V, f = 1 MHz

Reverse recovery time

IF = IR = 50 mA to 200 mA,

recover to 0.1 IR

trr

Figure 1. Typical Variation of Forward Current vs. Forward

Voltage

Figure 2. Typical High Current Forward Conduction Curve

18488

0.01

1000

100

0.1

0.4

0.6

0.8

1.0

0.2

VF - Forward Voltage (V)

18489

0.5

1.0

01.5

VF - Forward Voltage (V)

duty cycle = 2 %

tp = 300 ms

Figure 3. Typical Variation of Reverse Current at Various

Temperatures

Figure 4. Diode Capacitance vs. Reverse Voltage

0.01

0.1

100

1000

10 15 20 25 30 35 40 45 50

V - Reverse Voltage (V)

20084

75 °C

50 °C

25 °C

100 °C

Tamb = 125 °C

18491

050

VR - Reverse Voltage (V)

100

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