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SIE882DF 데이터시트(PDF) 5 Page - Vishay Siliconix |
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SIE882DF 데이터시트(HTML) 5 Page - Vishay Siliconix |
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5 / 10 page ![]() Document Number: 65002 S09-1221-Rev. A, 29-Jun-09 www.vishay.com 5 Vishay Siliconix SiE882DF New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 50 100 150 200 250 300 0 25 50 75 100 125 150 Package Limited TC - Case Temperature (°C) Power Derating, Junction-to-Case 0 20 40 60 80 100 120 140 25 50 75 100 125 150 TC - Case Temperature (°C) |
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