TP0202K datasheet(2/4 Pages) VISHAY

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Vishay Siliconix

SPICE Device Model TP0202K

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Simulated

Data

Measured

Data

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = −250 µA

2.1

On-State Drain Current

ID(on)

VDS = −10 V, VGS = −10 V

VGS = −10 V, ID = −0.5 A

2.1

Drain-Source On-State Resistance

rDS(on)

VGS = −4.5 V, ID = −0.05 A

1.3

1.25

Ω

Forward Transconductance

gfs

VDS = −5 V, ID = −0.2 A

283

315

Diode Forward Voltage

VSD

IS = −0.25 A, VGS = 0 V

−0.76

Dynamic

Total Gate Charge

704

1000

Gate-Source Charge

Qgs

225

Gate-Drain Charge

Qgd

VDS = −16 V, VGS = −10 V, ID = −0.2 A

175

Notes

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2%.

b. Guaranteed by design, not subject to production testing.

www.vishay.com

Document Number: 73186

S-52635

Rev. B, 02-Jan-06

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