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TPSMP33A 데이터시트(PDF) 1 Page - Vishay Siliconix |
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TPSMP33A 데이터시트(HTML) 1 Page - Vishay Siliconix |
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1 / 5 page ![]() Document Number: 88471 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 19-Apr-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 High Power Density Surface Mount PAR® Transient Voltage Suppressors TPSMP6.8 thru TPSMP43A Vishay General Semiconductor New Product TYPICAL APPLICATIONS Protection for ICs, drive transistors, signal lines of sensor units, and electronic units in consumer, computer, industrial and automotive applications. FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology •TJ = 185 °C capability suitable for high reliability and automotive requirement • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Uni-direction only • Excellent clamping capability • Low incremental surge resistance • Very fast response time • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: DO-220AA (SMP) Molding compound meets UL 94 V-0 flammability rating Base P/NHM3 - halogen-free, RoHS compliant, and automotive grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 HM3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end Notes (1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2 (2) Mounted on PCB with 5.0 mm x 5.0 mm copper pads attached to each terminal (3) Pulse test: 300 μs pulse width, 1 % duty cycle PRIMARY CHARACTERISTICS VBR 6.8 V to 43 V PPPM (for VBR 6.8 V) 250 W PPPM (for VBR 7.5 V to 12 V) 300 W PPPM (for VBR 13 V to 43 V) 400 W PD 2.5 W IFSM 40 A TJ max. 185 °C DO-220AA (SMP) eSMP ® Series MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Peak power dissipation with a 10/1000 μs waveform (fig. 1 and 3) (1)(2) PPPM See table next page W Peak power pulse current with a 10/1000 μs waveform (fig. 1) (1) IPPM See table next page A Power dissipation on infinite heatsink, TA = 75 °C PD 2.5 W Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 40 A Maximum instantaneous forward voltage at 25 A (3) VF 2.5 V Operating junction and storage temperature range TJ, TSTG - 65 to + 185 °C |
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