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BUW50 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BUW50 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors BUW50 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;L=25mH 125 V V(BR)EBO Emitter-base breakdown voltage IE=20mA ;IC=0 7 V VCEsat-1 Collector-emitter saturation voltage IC=10A; IB=0.5A 0.9 V VCEsat-2 Collector-emitter saturation voltage IC=20A; IB=2A 1.0 V VBEsat Base-emitter saturation voltage IC=20A; IB=2A 1.6 V ICEV Collector cut-off current VCE=250V;VBE=-1.5V 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA Switching times ton Turn-on time 1.9 μs ts Storage time 1.5 μs tf Fall time VCC=60V;IC=10A; IB1 =1.0A;Pw=20μs 0.5 μs |
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