epc130/epc131

Recommended Operating Conditions

Voltage to Any Pin

Maximum Power Dissipation

-5.5V to +5.5V

300mW

-40°C to +85°C

+260°C

Humidity (non-condensing)

Min.

4.0

-40°

+5

Max.

5.2

+85°

+95

Units

V

C

%

Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Recommended operating conditions indic -

ate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. For guaranteed specifica -

tions and test conditions, see Electrical Characteristics.

Note 2: This device is a highly sensitive CMOS ac current amplifier with an ESD rating of JEDEC HBM class 0 (<250V). Handling and as -

sembly of this device should only be done at ESD protected workstations.

Electrical Characteristics

Symbol

Parameter

Conditions/Comments

Values

Units

Min.

Typ.

Max.

Power Supply Current

epc130 R1=27k, no photo current

0.8

1.2

mA

epc131 R1=4k7, no photo current

1.1

1.5

Sensitivity

320

mV

320

mV

Reversed Photodiode

Voltage

relative to VDD

VDD-

1.55

V

Output Offset Voltage

1.4

1.55

1.7

V

Output Voltage Limits

0.3

V

35

40

mV

80

100

40

50

90

100

DC Light Current Range

Refer to section Application Information, Ambient Light

0.0

3.0

mA

Photodiode Capacitance

epc130 Refer to section Application Information, Photodiode

Capacitance

15

50

pF

epc131

30

40

Output Current

Push-pull driving capability

-100

+100

μA

Power-up Threshold Voltage

The voltage at VDD when the device starts up and the

startup time is running.

3.0

3.5

4.0

V

Hysteresis

On power-up threshold voltage

0.5

0.75

1.0

V

Power-up Startup Time

VDD slew rate >100V/ms

1.5

ms

Recovery Time

epc130 After the reception of a valid pulse current at pin PD

until the output is stable at its operation voltage. R efer

also to Other Parameters section.

400

μs

epc131

50

Input Pulse Width at Pin PD

epc130 Current pulse width at pin PD necessary to generate

an output signal at pin OUT. The input sensitivity is de -

pendent on the input current pulse width (refer to the

section Applications).

6

μs

epc131

0.75

μs

Input pulse slew rate

epc130 Recommended rise and fall time of the current pulse at

pin PD

500

ns

epc131

50

ns

Photodiode bias resistor

epc130 refer to section 'Application Information, Photodiode

Resistor'

27

kΩ

epc131

4.7

© 2011 ESPROS Photonics Corporation

Characteristics subject to change without notice

2

Datasheet epc13x analog - V2.1

www.espros.ch