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TSM4946D 데이터시트(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

부품명 TSM4946D
상세설명  60V Dual N-Channel MOSFET
PDF  6 Pages
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제조업체  TSC [Taiwan Semiconductor Company, Ltd]
홈페이지  http://www.taiwansemi.com
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TSM4946D 데이터시트(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

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TSM4946D
60V Dual N-Channel MOSFET
2/2
Version: A09
Electrical Specifications
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
BVDSS
60
--
--
V
Gate Threshold Voltage
VDS = VGS, ID = 250µA
VGS(TH)
1
--
3
V
Gate Body Leakage
VGS = ±20V, VDS = 0V
IGSS
--
--
±100
nA
Zero Gate Voltage Drain Current
VDS = 60V, VGS = 0V
IDSS
--
--
2
µA
On-State Drain Current
a
VDS = 5V, VGS = 10V
ID(ON)
20
--
--
A
VGS = 10V, ID = 4.5A
--
45
55
Drain-Source On-State Resistance
a
VGS = 4.5V, ID = 3.9A
RDS(ON)
--
55
75
mΩ
Forward Transconductance
a
VDS = 15V, ID = 4.5A
gfs
--
13
--
S
Diode Forward Voltage
IS = 2A, VGS = 0V
VSD
--
0.9
1.2
V
Dynamic
b
Total Gate Charge
Qg
--
19
30
Gate-Source Charge
Qgs
--
4
--
Gate-Drain Charge
VDS = 30V, ID = 4.5A,
VGS = 10V
Qgd
--
3
--
nC
Input Capacitance
Ciss
--
910
--
Output Capacitance
Coss
--
145
--
Reverse Transfer Capacitance
VDS = 24V, VGS = 0V,
f = 1.0MHz
Crss
--
67
--
pF
Switching
c
Turn-On Delay Time
td(on)
--
13
20
Turn-On Rise Time
tr
--
11
20
Turn-Off Delay Time
td(off)
--
36
60
Turn-Off Fall Time
VDD = 30V, RL = 30Ω,
ID = 1A, VGEN = 10V,
RG = 6Ω
tf
--
11
20
nS
Notes:
a. pulse test: PW ≤300µS, duty cycle ≤2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.



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