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2SC4097 데이터시트(PDF) 1 Page - Shenzhen Jin Yu Semiconductor Co., Ltd.

부품명 2SC4097
상세설명  TRANSISTOR (NPN)
PDF  1 Pages
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제조업체  HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.]
홈페이지  http://www.htsemi.com
Logo HTSEMI - Shenzhen Jin Yu Semiconductor Co., Ltd.

2SC4097 데이터시트(HTML) 1 Page - Shenzhen Jin Yu Semiconductor Co., Ltd.

  2SC4097 Datasheet HTML 1Page - Shenzhen Jin Yu Semiconductor Co., Ltd.  
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TRANSISTOR (NPN)
FEATURES
High ICMax. ICMax=0.5A
Low VCE(sat).Optimal for low voltage operation.
Complements the 2SA1577
MAXIMUM RATINGS (TA=25
℃unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
32
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
500
mA
PC
Collector Power Dissipation
200
mW
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25
℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=100μA,IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA,IB=0
32
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA,IC=0
5
V
Collector cut-off current
ICBO
VCB=20V,IE=0
1
μA
Emitter cut-off current
IEBO
VEB=4V,IC=0
1
μA
DC current gain
hFE
VCE=3V,IC=10mA
82
390
Collector-emitter saturation voltage
VCE(sat)
IC=
500mA, IB=50mA
0.4
V
Transition frequency
fT
VCE=5V, IC=20mA,f =100MHz
250
MHz
Collector Output Capacitance
Cob
VCB=10V,IE=0,f=1MHZ
6
pF
CLASSIFICATION OF
hFE
Rank
P
Q
R
Range
82-180
120-270
180-390
MARKING
CP
CQ
CR
SOT-323
1. BASE
2. EMITTER
3. COLLECTOR
1
2
3
2SC4097
１　
www.htsemi.com
semiconductor
JinYu


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