2SC4115 datasheet(1/2 Pages) HTSEMI

부품명	2SC4115

상세설명	TRANSISTOR (NPN)

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TRANSISTOR (NPN)

FEATURES

Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A)

Excellent current gain characteristics.

Complements to 2SA1585

MAXIMUM RATINGS (TA=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

40

V

VCEO

Collector-Emitter Voltage

20

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current -Continuous

3

A

PC

Collector Power Dissipation

500

mW

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC= 50μA, IE=0

40

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA , IB=0

20

V

Emitter-base breakdown voltage

V(BR)EBO

IE=50μA, IC=0

6

V

Collector cut-off current

ICBO

VCB=30V, IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB= 5V, IC=0

0.1

μA

DC current gain

hFE

VCE=2V, IC= 0.1A

120

560

Collector-emitter saturation voltage*

VCEsat

IC= 2A, IB=0.1A

0.5

V

Transition frequency

fT

VCE=2V, IC=0.5 A

F=100MHz

200

290

MHz

*pulse test

CLASSIFICATION OF hFE

Rank

Q

R

S

Range

120-270

180-390

270-560

marking

4115Q

4115R

4115S

SOT-89

1. BASE

2. COLLECTOR

3. EMITTER

1

2

3

１　

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2SC4115

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