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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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MMBD4448HT 데이터시트(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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MMBD4448HT 데이터시트(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  MMBD4448HT Series Plastic-Encapsulated Switching Diode Elektronische Bauelemente 21-Jul-2011 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Top View A L C B D G H J F K E 1 2 3 1 2 3 REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 1.5 1.7 G - 0.1 B 1.45 1.75 H 0.55 REF. C 0.75 0.85 J 0.1 0.2 D 0.7 0.9 K - E 0.9 1.1 L 0.5 TYP. F 0.15 0.25 M 0.25 0.325 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Fast switching speed For General Purpose Switching Applications High Conductance MARKING PACKAGE INFORMATION Package MPQ Leader Size SOT-523 3K 7 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameters Symbol Rating Unit Non-Repetitive Peak Reverse Voltage VRM 100 V Peak Repetitive Reverse Voltage VRRM 80 V Working Peak Reverse Voltage VRWM 80 V DC Blocking Voltage VR 80 V RMS Reverse Voltage VR(RMS) 57 V Forward Continuous Current IFM 500 mA Average Rectified Output Current IO 250 mA Non-Repetitive Peak Forward Surge Current t=1.0µs IFSM 4.0 A t=1.0s 1.5 Power Dissipation PD 150 mW Thermal Resistance, Junction to Ambient RθJA 833 °C / W Storage Temperature TSTG -65~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameters Symbol Min. Max. Unit Test Conditions Reverse Breakdown Voltage VR 80 - V IR=2.5µA Forward Voltage VF1 0.62 0.72 V IF=5mA VF2 - 0.855 V IF=10mA VF3 - 1 V IF=100mA VF4 - 1.25 V IF=150mA Maximum DC Reverse Current at rated DC blocking voltage IR1 - 0.1 µA VR=70V IR2 25 nA VR=20V Capacitance between terminals CT 3.5 pF VR=6V, f=1MHz Maximum Reverse Recovery Time TRR - 4 nS VR=6V, IF=5mA Product MMBD4448HT MMBD4448HTA MMBD4448HTC MMBD4448HTS Marking A3 A6 A7 AB Circuit SOT-523 |
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