SSF84W

P-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente

04-Nov-2011 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Rating

Unit

Drain – Source Voltage

-50

V

Gate – Source Voltage - Continuous

±20

V

Continuous Drain Current

-130

mA

Pulsed Drain Current (tp

≤10µs)

-520

Total Power Dissipation

225

mW

Maximum Lead Temperature for Soldering

Purposes, for 10 seconds

260

°C

Maximum Junction–Ambient

556

°C / W

Operating Junction & Storage Temperature Range

-55 ~ 150

°C

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

OFF Characteristics

Drain-Source Breakdown Voltage

-50

-

-

V

Gate-Source Leakage Current

-

-

±60

µA

Drain-Source Leakage Current

-

-

-0.1

µA

-

-

-15

-

-

-60

ON Characteristics

1

Gate Threshold Voltage

-0.8

-

-2

V

Transfer Admittance

|yfs|

50

-

-

mS

Drain-Source On Resistance

-

5

10

Dynamic Characteristics

Turn-on Delay Time

-

2.5

-

nS

Rise Time

-

1

-

Turn-off Delay Time

-

16

-

Fall Time

-

8

-

Gate Charge

-

6000

-

pC

Input Capacitance

-

30

-

pF

Output Capacitance

-

10

-

Reverse Transfer Capacitance

-

5

-

Source-Drain Diode

Continuous Current

-

-

-0.130

A

Pulsed Current

-

-

-0.520

Forward On Voltage

2

-

-2.5

-

V

Notes:

1.

Pulse Test: Pulse Width ≦ 300 µs, Duty cycle ≦ 2%

2.

Switching characteristics are independent of operating junction temperature.