SSG4520H datasheet(2/6 Pages) SECOS

2 / 6 page

Elektronische Bauelemente

SSG4520H

N-Ch: 6.6A, 20V, RDS(ON) 47 m

P-Ch: -5.2A, -20V, RDS(ON) 79 m

N & P-Ch Enhancement Mode Power MOSFET

10-Jan-2012 Rev. D

Page 2 of 6

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

Parameter

Symbol Ch

Min.

Typ.

Max.

Unit

Teat Conditions

Static

VDS=VGS, ID=250μA

Gate Threshold Voltage

VGS(th)

-1

VDS=VGS, ID= -250μA

±100

VDS=0, VGS=8V

Gate-Body Leakage

IGSS

±100

VDS=0, VGS= -8V

VDS=8V, VGS=0

Zero Gate Voltage Drain Current

IDSS

-1

μA

VDS= -8V, VGS=0

VDS=5V, VGS=4.5V

On-State Drain Current

ID(on)

-10

VDS= -5V, VGS= -4.5V

VGS=4.5V, ID=5.3A

VGS=2.5V, ID=5A

VGS= -4.5V, ID= -4.2A

Drain-Source On-Resistance

RDS(ON)

110

mΩ

VGS= -2.5V, ID= -3.8A

0.7

VGS=0, IS=1.1A

Diode Forward Voltage

VSD

-0.73

VGS=0, IS= -1.1A

VDS=10V, ID=5.3A

Forward Transconductance

gfs

VDS= -10V, ID= -4.2A

Dynamic

439

Input Capacitance

Ciss

683

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

N-Channel

VDS=15V, VGS=0, f=1MHz

P-Channel

VDS= -15V, VGS=0, f=1MHz

Total Gate Charge

0.9

Gate-Source Charge

Qgs

2.8

2.1

Gate-Drain Charge

Qgd

2.7

N-Channel

ID=5.3A, VDS=10V, VGS=4.5V

P-Channel

ID= -4.2A, VDS= -10V, VGS= -4.5V

Turn-On Delay Time

Td(on)

Rise Time

Turn-Off Delay Time

Td(off)

Fall Time

N-Channel

VDD=10V, VGEN=4.5V

ID=5.3A, RGEN=6Ω, RL=1.8Ω

P-Channel

VDD= -10V, VGEN= -4.5V

ID= -4.2A, RGEN=6Ω, RL=2.3Ω

Notes:

1. Pulse test：PW 300μs duty cycle

≦≦

2%.

2. Guaranteed by design, not subject to production testing.

SSG4520H 데이터시트(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

SSG4520H 데이터시트(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

Html Pages

1 2 3 4 5 6

데이터시트 다운로드

링크 URL