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BAS81 데이터시트(PDF) 2 Page - Vishay Siliconix

부품명 BAS81
상세설명  Small Signal Schottky Diodes
PDF  4 Pages
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제조업체  VISHAY [Vishay Siliconix]
홈페이지  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

BAS81 데이터시트(HTML) 2 Page - Vishay Siliconix

  BAS81 Datasheet HTML 1Page - Vishay Siliconix BAS81 Datasheet HTML 2Page - Vishay Siliconix BAS81 Datasheet HTML 3Page - Vishay Siliconix BAS81 Datasheet HTML 4Page - Vishay Siliconix  
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Document Number 85509
Rev. 1.8, 23-Jul-10
BAS81, BAS82, BAS83
Vishay Semiconductors
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Junction to ambient air
on PC board 50 mm x 50 mm x 1.6 mm
RthJA
320
K/W
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
- 65 to + 150
°C
Parameter
Test condition
Symbol
Min.
Typ.
Max.
Unit
Forward voltage
IF = 0.1 mA
VF
330
mV
IF = 1 mA
VF
410
mV
IF = 15 mA
VF
1000
mV
Reverse current
VR = VRmax
IR
200
nA
Diode capacitance
VR = 1 V, f = 1 MHz
CD
1.6
pF
Figure 1. Max. Reverse Power Dissipation vs.
Junction Temperature
0
2
4
6
8
10
12
14
25
50
75
100
125
150
T
j - Junction Temperature (°C)
15794
V
R = 60 V
R
thJA = 540 K/W
PR
VR
- Limit at 100 %
P
R - Limit at 100 % VR
P
R - Limit at 80 % VR
Figure 2. Reverse Current vs. Junction Temperature
0.1
100
1000
25
50
75
100
125
150
1
10
15795
VR = VRRM
Tj - Junction Temperature (°C)



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