Product specification

500V N-Channel MOSFET

TG430

Parameter

l

Value Unit

Drain-Source Voltage

V

DSS

500

V

Drain Current - Continuous

I

D

4.5

A

Drain Current - Pulsed

I

DM

18

A

Gate-Source Voltage

V

GSS

±30

V

Power Dissipation

P

D

85

W

Max. Operating Junction Temperature

T

j

150

Storage Temperature

T

stg

DESCRIPTION

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Drain-Source Breakdown Voltage

BV

DSS

V

500

—

—

V

Zero Gate Voltage Drain Current

I

DSS

V

—

—

1.0

uA

Gate-Body Leakage Current, Forward

I

GSSF

V

—

—

100

nA

Gate-Body Leakage Current, Reverse

I

GSSR

V

—

—

-100

nA

Gate Threshold Voltage

V

GS(th)

V

3.0

—

5.0

V

Static Drain-Source On-Resistance

R

DS(on)

V

—

1.36

1.8

W

Drain-Source Diode Forward Voltage

V

SD

V

—

—

1.4

V

These N-Channel enhancement mode power field effect

’

transistors are produced using Fairchild s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supply.

ELECTRICAL CHARACTERISTICS

ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C)

O

( Ta = 25 C)

O

TO-252

TIGER ELECTRONIC CO., LTD.

T G S