2SA1020 datasheet(1/3 Pages) TGS

부품명	2SA1020

상세설명	TO-92L Plastic-Encapsulate Transistors (PNP)

PDF	3 Pages

Scroll/Zoom	100%

제조업체	TGS [Tiger Electronic Co.,Ltd]

홈페이지	http://www.tgselec.com

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1 / 3 page

TO-92L Plastic-Encapsulate Transistors

2SA1020 TRANSISTOR (PNP)

FEATURES

Power amplifier applications

MAXIMUM RATINGS (TA=25

℃ unless otherwise noted)

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC =-100µA,IE=0

-50

V

Collector-emitter breakdown voltage

V(BR)CEO

IC =-10mA,IB=0

-50

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-100µA,IC=0

-5

V

Collector cut-off current

ICBO

VCB=-50V,IE=0

-1

µA

Emitter cut-off current

IEBO

VEB=-5V,IC=0

-1

µA

hFE(1)

VCE=-2V,IC=-0.5A

70

240

DC current gain

hFE(2)

VCE=-2V,IC=-1.5A

40

Collector-emitter saturation voltage

VCE(sat)

IC=-1A,IB=-50mA

-0.5

V

Base-emitter saturation voltage

VBE(sat)

IC=-1A,IB=-50mA

-1.2

V

Transition frequency

fT

VCE=-2V,IC=-500mA

100

MHz

Collector output capacitance

Cob

VCB=-10V,IE=0,f=1MHz

40

pF

Turn-on time

ton

0.1

μs

Storage time

ts

1

μs

Fall time

tf

VCC=-30V,IB1=-IB2=-0.05A, IC=-1A

0.1

μs

CLASSIFICATION OF

hFE(1)

Rank

O

Y

Range

70-140

120-240

TO-92L

1. EMITTER

2. COLLECTOR

3. BASE

1 2 3

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

-50

V

VCEO

Collector-Emitter Voltage

-50

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current –Continuous

-2

A

PC

Collector Power Dissipation

900

mW

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

TIGER ELECTRONIC CO.,LTD

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2SA1020 데이터시트(PDF) 1 Page - Tiger Electronic Co.,Ltd

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