TO-220

Parameter

l

Value

Unit

Collector-Base Voltage

V

CBO

150

V

Collector-Emitter Voltage

V

CEO

100

V

Emitter-Base Voltage

V

EBO

7.0

V

Collector Current

I

C

5.0

A

Base Current

I

B

0.5

A

Total Dissipation at

P

tot

30

W

Max. Operating Junction Temperature

T

j

150

Storage Temperature

T

stg

-55~150

2SD560

DESCRIPTION

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Collector Cut-off Current

I

CBO

V

—

—

1.0

uA

Emitter Cut-off Current

I

EBO

V

—

—

10

uA

Collector-Emitter Sustaining Voltage

V

CEO

I

100

—

—

V

DC Current Gain

h

FE(1)

V

2000

—

15000

h

FE(2)

V

500

—

—

Collector-Emitter Saturation Voltage

V

CE(sat)

I

—

—

1.5

V

Base Saturation Voltage

V

BE(sat)

I

—

—

2.0

V

Current Gain Bandwidth Product

f

T

V

4.0

—

—

MHz

NPN Silicon Power Ttransistors

Product specification

The 2SD560 is a mold power transistor developed for lowfrequency

power amplifiers and low-speed switching. This transistor is

ideal for direct driving from the IC output of devices such as pulse

motor drivers and relay drivers, and PC terminals.

ELECTRICAL CHARACTERISTICS

ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C)

O

( Ta = 25 C)

O

TIGER ELECTRONIC CO.,LTD

hFE Classification

classification

hFE1

R

O

Y

2000~5000

3000~7000

5000~15000