MBR360 datasheet(1/6 Pages) VISHAY

부품명	MBR360

상세설명	Schottky Rectifier, 3 A

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VS-MBR350, VS-MBR350-M3, VS-MBR360, VS-MBR360-M3

www.vishay.com

Vishay Semiconductors

Revision: 13-Oct-11

1

Document Number: 93450

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Schottky Rectifier, 3 A

FEATURES

• Low profile, axial leaded outline

• Very low forward voltage drop

• High frequency operation

• High

purity,

high

temperature

epoxy

encapsulation

for

enhanced

mechanical

strength and moisture resistance

• Guard ring for enhanced ruggedness and long

term reliability

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified for commercial level

• Halogen-free according to IEC 61249-2-21 definition

(-M3 only)

DESCRIPTION

The VS-MBR350..., VS-MBR350 axial leaded Schottky

rectifier has been optimized for very low forward voltage

drop, with moderate leakage. Typical applications are in

switching power supplies, converters, freewheeling diodes,

and reverse battery protection.

PRODUCT SUMMARY

Package

DO-201AD (C-16)

IF(AV)

3 A

VR

50 V, 60 V

VF at IF

0.64 V

IRM max.

15 mA at 125 °C

TJ max.

150 °C

Diode variation

Single die

EAS

5.0 mJ

Cathode

Anode

C-16

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

CHARACTERISTICS

VALUES

UNITS

IF(AV)

Rectangular waveform

3.0

A

VRRM

50/60

V

IFSM

tp = 5 μs sine

460

A

VF

3 Apk, TJ = 25 °C

0.73

V

TJ

- 40 to 150

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

VS-MBR350

VS-MBR350-M3

VS-MBR360

VS-MBR360-M3

UNITS

Maximum DC reverse voltage

VR

50

60

V

Maximum working peak

reverse voltage

VRWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average forward current

See fig. 4

IF(AV)

50 % duty cycle at TL = 50 °C, rectangular waveform

3.0

A

Maximum peak one cycle

non-repetitive surge current

See fig. 6

IFSM

5 µs sine or 3 µs rect. pulse

Following any rated load

condition and with rated

VRRM applied

460

10 ms sine or 6 ms rect. pulse

80

Non-repetitive avalanche energy

EAS

TJ = 25 °C, IAS = 1 A, L = 10 mH

5.0

mJ

Repetitive avalanche current

IAR

Current decaying linearly to zero in 1 μs

Frequency limited by, TJ maximum VA = 1.5 x VR typical

1.0

A

유사한 부품 번호 - MBR360

제조업체	부품명	데이터시트	상세설명
Motorola, Inc	MBR360	75Kb / 4P	Surface Mount Schottky Power Rectifier
International Rectifier	MBR360	33Kb / 5P	SCHOTTKY RECTIFIER
ON Semiconductor	MBR360	57Kb / 4P	Axial Lead Rectifiers December, 2004 ??Rev. 4
Motorola, Inc	MBR360	121Kb / 6P	SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40, 50, 60 VOLTS
ON Semiconductor	MBR360	59Kb / 4P	Axial Lead Rectifiers June, 2006 ??Rev. 6

More results

유사한 설명 - MBR360

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	15MQ040NPBF	99Kb / 5P	Schottky Rectifier, 3 A 11-Jun-08
	30BQ100PBF	93Kb / 6P	Schottky Rectifier, 3 A 16-Apr-08
	15MQ040NPBF	111Kb / 6P	Schottky Rectifier, 3 A 04-Mar-10
	30BQ100PBF	112Kb / 7P	Schottky Rectifier, 3 A 04-Mar-10
	30MQ040-M3	117Kb / 6P	Schottky Rectifier, 3 A 10-Sep-10
	MBR340	119Kb / 6P	Schottky Rectifier, 3 A 19-Sep-11
	VS-15MQ040NPBF	111Kb / 6P	Schottky Rectifier, 3 A 23-May-14
	30BQ100PBF	111Kb / 7P	Schottky Rectifier, 3 A 04-Mar-10
	VS-MBR350M3	113Kb / 6P	Schottky Rectifier, 3 A 13-Oct-11
	VS-30BQ100PBF	111Kb / 7P	Schottky Rectifier, 3 A 04-Mar-10

More results

MBR360 데이터시트(PDF) 1 Page - Vishay Siliconix

MBR360 데이터시트(HTML) 1 Page - Vishay Siliconix

유사한 부품 번호 - MBR360

유사한 설명 - MBR360

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