TIP3055 datasheet(1/1 Pages) TGS

부품명	TIP3055

상세설명	Complementary Silicon High Power Ttransistors

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제조업체	TGS [Tiger Electronic Co.,Ltd]

홈페이지	http://www.tgselec.com

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Parameter

Symbol

Value

Unit

Collector-Base Voltage

VCBO

100

V

Collector-Emitter Voltage

VCEO

60

V

Emitter-Base Voltage

VEBO

7.0

V

Collector Current

IC

15

A

Base Current

IB

7

A

Total Dissipation at

Ptot

90

W

Max. Operating Junction Temperature

Tj

150

oC

Storage Temperature

Tstg

-55~150

oC

TIP3055 / TIP2955

DESCRIPTION

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Collector Cut-off Current

ICEO

VCB=50V, IE=0

—

0.7

mA

Emitter Cut-off Current

IEBO

VEB=7.0V, IC=0

—

5.0

mA

Collector-Emitter Sustaining Voltage

VCEO

IC=30mA, IB=0

60

—

V

DC Current Gain

hFE(1)

VCE=4.0V, IC=4.0A

20

—

70

hFE(2)

VCE=4.0V, IC=10A

5

—

Collector-Emitter Saturation Voltage

VCE(sat)

IC=4.0A,IB=0.4A

—

1.0

V

IC=10A,IB=3.3A

—

3.0

Base-Emitter Voltage

VBE

VCE=4.0V,IC=4.0A

—

1.8

V

Transition Frequency

fT

VCE=10V,IC=0.5A

3

—

MHz

Complementary Silicon High Power Ttransistors

Product specification

The TIP3055 is a silicon Epitaxial-Base Planar NPN transistor mountend in

TO-247 plastic package. It is intented for power switching circuits, series

and shunt regulators, output stages and hi-fi amplifiers.

The complementary PNP type is the TIP2955.

ELECTRICAL CHARACTERISTICS

ABSOLUTE MAXIMUM RATINGS

TO-247

( Ta = 25 C)

O

( Ta = 25 C)

O

TIGER ELECTRONIC CO.,LTD

유사한 부품 번호 - TIP3055

제조업체	부품명	데이터시트	상세설명
Mospec Semiconductor	TIP3055	107Kb / 3P	POWER TRANSISTORS(15A,60V,90W)
Motorola, Inc	TIP3055	104Kb / 4P	POWER TRANSISTORS COMPLEMENTARY SILICON
ON Semiconductor	TIP3055	101Kb / 4P	POWER TRANSISTORS COMPLEMENTARY SILICON 1996 REV 1
Power Innovations Ltd	TIP3055	95Kb / 6P	NPN SILICON POWER TRANSISTOR
STMicroelectronics	TIP3055	45Kb / 4P	COMPLEMENTARY SILICON POWER TRANSISTORS Aug-1999

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