CEN-U05 CEN-U06 CEN-U07 NPN

CEN-U55 CEN-U56 CEN-U57 PNP

COMPLEMENTARY SILICON

POWER TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CEN-U05/U55

series types are complementary silicon power

transistors designed for general purpose audio amplifier

applications. These devices are electrically equivalent to

National Semiconductor’s NSDU05, NSDU06, NSDU07,

NSDU55, NSDU56, and NSDU57.

MARKING: FULL PART NUMBER

CEN-U05

CEN-U06

CEN-U07

MAXIMUM RATINGS: (TC=25°C)

SYMBOL

CEN-U55

CEN-U56

CEN-U57

UNITS

Collector-Base Voltage

VCBO

60

80

100

V

Collector-Emitter Voltage

VCEO

60

80

100

V

Emitter-Base Voltage

VEBO

4.0

V

Continuous Collector Current

IC

2.0

A

Power Dissipation

PD

10

W

Power Dissipation (TA=25°C)

PD

1.75

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

71.4

°C/W

Thermal Resistance

ΘJC

12.5

°C/W

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICBO

VCB=Rated VCBO

0.1

μA

IEBO

VEB=4.0V

100

μA

BVCEO

IC=1.0mA (CEN-U05, CEN-U55)

60

V

BVCEO

IC=1.0mA (CEN-U06, CEN-U56)

80

V

BVCEO

IC=1.0mA (CEN-U07, CEN-U57)

100

V

VCE(SAT)

IC=250mA, IB=10mA

0.5

V

VCE(SAT)

IC=250mA, IB=25mA

0.35

V

VBE(ON)

VCE=1.0V, IC=250mA

1.2

V

hFE

VCE=1.0V, IC=50mA

80

hFE

VCE=1.0V, IC=250mA

50

hFE

VCE=1.0V, IC=500mA

20

fT

VCE=5.0V, IC=200mA, f=100MHz

50

MHz

Cob

VCB=10V, IE=0, f=1.0MHz

30

pF

APPLICATIONS:

• Designed for general purpose high

voltage amplifiers and drivers

FEATURES:

• High Collector-Emitter breakdown voltage

• High 10W power dissipation

TO-202 CASE

R2 (20-January 2012)

www.centr a lsemi.com