CMLM0575

SURFACE MOUNT SILICON

N-CHANNEL MOSFET AND

LOW VF SCHOTTKY DIODE

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMLM0575

is a Multi Discrete Module™ consisting of a single

N-Channel Enhancement-mode MOSFET and a

Low VF Schottky diode packaged in a space saving

PICOmini™ SOT-563 surface mount case. This

device is designed for small signal general purpose

applications where size and operational efficiency are

prime requirements.

MAXIMUM RATINGS - CASE: (TA=25°C)

SYMBOL

UNITS

Power Dissipation (Note 1)

PD

350

mW

Power Dissipation (Note 2)

PD

300

mW

Power Dissipation (Note 3)

PD

150

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

MAXIMUM RATINGS - Q1: (TA=25°C)

SYMBOL

UNITS

Drain-Source Voltage

VDS

20

V

Gate-Source Voltage

VGS

8.0

V

Continuous Drain Current

ID

650

mA

MAXIMUM RATINGS - D1: (TA=25°C)

SYMBOL

UNITS

Peak Repetitive Reverse Voltage

VRRM

40

V

Continuous Forward Current

IF

500

mA

Peak Repetitive Forward Current, tp

≤1.0ms

IFRM

3.5

A

Peak Forward Surge Current, tp = 8.0ms

IFSM

10

A

ELECTRICAL CHARACTERISTICS - Q1: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

IGSSF, IGSSR

VGS=4.5V, VDS=0

1.0

μA

IDSS

VDS=16V, VGS=0

100

nA

BVDSS

VGS=0, ID=250μA

20

V

VGS(th)

VDS=VGS, ID=250μA

0.5

1.1

V

VSD

VGS=0, IS=200mA

1.1

V

rDS(ON)

VGS=4.5V, ID=600mA

0.14

0.23

Ω

rDS(ON)

VGS=2.5V, ID=500mA

0.2

0.275

Ω

rDS(ON)

VGS=1.8V, ID=350mA

0.7

Ω

FEATURES:

• High Current MOSFET (ID=650mA)

• ESD protection up to 2kV

• Low rDS(ON) MOSFET (275mΩ MAX @ VGS=2.5V)

• Low VF Schottky Diode (0.47V MAX @ 0.5A)

APPLICATIONS:

• DC - DC Converters

• Boost Converters

• Motor Drive Controls

• Battery Powered Portable Equipment

Notes:

MARKING CODE: 75C

SOT-563 CASE

R1 (27-September 2011)

www.centr a lsemi.com