| 전자부품 데이터시트 검색엔진 |
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BUP314S 데이터시트(PDF) 1 Page - Siemens Semiconductor Group |
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BUP314S 데이터시트(HTML) 1 Page - Siemens Semiconductor Group |
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1 / 7 page ![]() Semiconductor Group 1 Feb-07-1997 BUP 314S Preliminary data IGBT • High switching speed • Very low switching losses • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 Pin 3 G C E Type VCE IC Package Ordering Code BUP 314S 1200V 25A TO-218 AB C67040-A4207-A2 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage RGE = 20 kΩ VCGR 1200 Gate-emitter voltage VGE ± 20 DC collector current TC = 25 °C TC = 90 °C IC 17 25 A Pulsed collector current, tp = 1 ms TC = 25 °C TC = 90 °C ICpuls 34 50 Avalanche energy, single pulse IC = 25 A, VCC = 50 V, RGE = 25 Ω L = 200 µH, Tj = 25 °C EAS 65 mJ Power dissipation TC = 25 °C Ptot 300 W Chip or operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 |
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