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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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WFD830 데이터시트(PDF) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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WFD830 데이터시트(HTML) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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1 / 7 page  Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. WF WF WF WFD D D D830 830 830 830 Rev.A Nov.2010 Silicon Silicon Silicon Silicon N-Channel N-Channel N-Channel N-Channel MOSFET MOSFET MOSFET MOSFET Features ■ 4.5A,500V,RDS(on)(Max 1.5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 32nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi ’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast. Absolute Maximum Ratings Symbol Parameter Value Units VDSS Drain Source Voltage 500 V ID Continuous Drain Current(@Tc=25℃) 4.5 A Continuous Drain Current(@Tc=100℃) 2.9 A IDM Drain Current Pulsed (Note1) 18 A VGS Gate to Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 300 mJ EAR Repetitive Avalanche Energy (Note 1) 7.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Total Power Dissipation(@Tc=25℃) 48 W Derating Factor above 25℃ 0.38 W/℃ TJ, Tstg Junction and Storage Temperature -55~150 ℃ TL Channel Temperature 300 ℃ Thermal Characteristics Symbol Parameter Value Units Min Typ Max RQJC Thermal Resistance, Junction-to-Case - - 2.6 ℃/W RQJA Thermal Resistance, Junction-to-Ambient* - - 50 ℃/W RQJA Thermal Resistance, Junction-to-Ambient - - 110 ℃/W *When mounted on the minimum pad size recommended(PCB Mount) |
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