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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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WFP630 데이터시트(PDF) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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WFP630 데이터시트(HTML) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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2 / 7 page  2/7 Steady, Steady, Steady, Steady, keep keep keep keep you you you you advance advance advance advance E E E Ellllec ec ec ecttttrrrriiiical cal cal cal Ch Ch Ch Cha a a arrrrac ac ac actttte e e errrriiiis s s sttttiiiics cs cs cs ((((T T T Tc c c c = = = = 25 25 25 25°°°°C C C C)))) Characteristics Symbol Test Condition Min Type Max Unit Gate leakage current IGSS VGS = ±30 V, VDS = 0 V - - ±100 nA Gate−source breakdown voltage V(BR)GSS IG = ±10 μA, VDS = 0 V ±30 - - V Drain cut−off current IDSS VDS = 200 V, VGS = 0 V - - 10 μA Drain−source breakdown voltage V(BR)DSS ID = 250 μA, VGS = 0 V 200 - - V Break Voltage Temperature Coefficient ΔBVDSS/ ΔTJ ID=250μA, Referenced to 25℃ - 0.2 - V/ ℃ Gate threshold voltage VGS(th) VDS = 10 V, ID =250 μA 2 - 4 V Drain−source ON resistance RDS(ON) VGS = 10 V, ID = 4.5A - - 0.4 Ω Forward Transconductance gfs VDS = 50 V, ID = 4.5A - 7.05 - S Input capacitance Ciss VDS = 25 V, VGS = 0 V, f = 1 MHz - 500 720 pF Reverse transfer capacitance Crss - 22 29 Output capacitance Coss - 85 110 Switching time Rise time tr VDD =100 V, ID = 9 A RG=12 Ω (Note4,5) - 11 30 ns Turn−on time ton - 70 150 Fall time tf - 60 130 Turn−off time toff - 65 140 Total gate charge (gate−source plus gate−drain) Qg VDD = 160 V, VGS = 10 V, ID = 9 A (Note4,5) - 22 29 nC Gate−source charge Qgs - 3.6 - Gate−drain (“miller”) Charge Qgd - 10 - Sou Sou Sou Sourrrrc c c ce e e e− − − −D D D Drrrra a a aiiiin n n n R R R Ra a a atttting ing ing ings s s s a a a an n n nd d d d Ch Ch Ch Cha a a arrrrac ac ac actttte e e errrriiiis s s sttttiiiics cs cs cs ((((T T T Ta a a a = = = = 25 25 25 25°°°°C C C C)))) Characteristics Symbol Test Condition Min Type Max Unit Continuous drain reverse current IDR - - - 9 A Pulse drain reverse current IDRP - - - 36 A Forward voltage (diode) VDSF IDR = 9 A, VGS = 0 V - 1.4 1.5 V Reverse recovery time trr IDR = 9A, VGS = 0 V, dIDR / dt = 100 A / μs - 140 - ns Reverse recovery charge Qrr - 1.1 2.2 μC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=500uH,IAS=9 A,VDD=50V,RG=0Ω,Starting TJ=25℃ 3.ISD≤9A,di/dt≤300A/us, VDD<BVDSS,STARTING TJ=25℃ 4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2% 5.Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution WFP630 WFP630 WFP630 WFP630 |
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