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WTPB4A60SW 데이터시트(PDF) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd

부품명 WTPB4A60SW
상세설명  Bi-Directional Triode Thyristor
PDF  5 Pages
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제조업체  WINSEMI [Shenzhen Winsemi Microelectronics Co., Ltd]
홈페이지  http://www.winsemi.com
Logo WINSEMI - Shenzhen Winsemi Microelectronics Co., Ltd

WTPB4A60SW 데이터시트(HTML) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd

  WTPB4A60SW Datasheet HTML 1Page - Shenzhen Winsemi Microelectronics Co., Ltd WTPB4A60SW Datasheet HTML 2Page - Shenzhen Winsemi Microelectronics Co., Ltd WTPB4A60SW Datasheet HTML 3Page - Shenzhen Winsemi Microelectronics Co., Ltd WTPB4A60SW Datasheet HTML 4Page - Shenzhen Winsemi Microelectronics Co., Ltd WTPB4A60SW Datasheet HTML 5Page - Shenzhen Winsemi Microelectronics Co., Ltd  
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WTPB4A60SW
WTPB4A60SW
WTPB4A60SW
WTPB4A60SW
2 /5
Symbol
Characteristics
Min
Typ.
Max
Unit
IDRM/IRRM
off-state leakage current
(VAK= VDRM/VRRM Single phase, half wave)
TJ=25
℃
-
-
5
μA
TJ=125
℃
-
-
1
mA
VTM
Forward “On” voltage (IT=5A, Inst. Measurement)
-
1.2
1.6
V
IGT
Gate trigger current (continuous dc)
(VAK = 6 Vdc, RL = 10 Ω)
Note:1
T2+,G+
-
-
10
mA
T2+,G-
-
-
10
T2-,G-
-
-
10
VGT
Gate Trigger Voltage (Continuous dc)
)
(VAK = 6 Vdc, RL = 10 Ω)
Note:1
T2+,G+
-
-
1.5
V
T2+,G-
-
-
1.5
T2-,G-
-
-
1.5
VGD
Gate threshold Voltage
ＶＤ=1/2V
DRM, RL = 3.3K Ω
TJ=125℃
0.2
-
-
V
dv/dt
Critical Rate of Rise of Off-State Voltage at
Commutation
(VD=0.67VDRM ;gate open)
Note:2
TJ=125℃
40
-
-
V/μs
IH
Holding Current
-
-
15
mA
IL
latching current
-
-
30
mA
Steady,
Steady,
Steady,
Steady, keep
keep
keep
keep you
you
you
you advance
advance
advance
advance
Electrical Characteristics (T
C=25℃ unless otherwise noted)
Note
1: minimum IGT is guaranted at 5% of IGT max.
2: for both polarities of A2 referenced to A1.



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