1N50Z

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-726.b

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

500

V

Gate-Source Voltage

±20

V

Drain Current

1.3 (Note 2)

A

Pulsed (Note 3)

5 (Note 2)

A

Avalanche Current (Note 3)

1.3

A

Avalanche Energy

Single Pulsed (Note 4)

113

mJ

Repetitive (Note 5)

2.6

mJ

Power Dissipation

40

W

Derate above 25°C

0.32

W/°C

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Drain current limited by maximum junction temperature

3. Repetitive Rating: Pulse width limited by maximum junction temperature

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

62.5

°C/W

Junction to Case

3.13

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

500

V

Drain-Source Leakage Current

1

µA

Gate- Source Leakage Current

Forward

+5

µA

Reverse

-5

µA

ON CHARACTERISTICS

Gate Threshold Voltage

2.0

4.0

V

Static Drain-Source On-State Resistance

4.6

6.0

Ω

DYNAMIC PARAMETERS

Input Capacitance

220 290

pF

Output Capacitance

30

35

pF

Reverse Transfer Capacitance

11

13

pF