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2N40 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 2N40
상세설명  2A, 400V N-CHANNEL POWER MOSFET
PDF  5 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2N40 데이터시트(HTML) 2 Page - Unisonic Technologies

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2N40
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-524.b
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
400
V
Gate-Source Voltage
VGSS
±30
V
Continuous
ID
2
A
Drain Current
Pulsed
IDM
7
A
Avalanche Current
IAR
2.5
A
Single Pulsed Avalanche Energy
EAS
100
mJ
Power Dissipation
PD
25
W
Linear Derating Factor
P
△ D/T
△ mb
0.2
W/°C
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ 150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
62.5
°C/W
Junction to Case
θJC
5
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
400
V
Breakdown Voltage Temperature
Coefficient
BV
△
DSS/T
△ J VDS=VGS, ID=250µA
0.45
V/°C
Drain-Source Leakage Current
IDSS
VDS=400V, VGS=0V
1
25
µA
Forward
VGS=+30V, VDS=0V
+10 +200 nA
Gate- Source Leakage Current
Reverse
IGSS
VGS=-30V, VDS=0V
-10 -200 nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=1.25A
3.0
3.4
Ω
DYNAMIC PARAMETERS
Input Capacitance
CISS
240
pF
Output Capacitance
COSS
44
pF
Reverse Transfer Capacitance
CRSS
VGS=0V, VDS=25V, f=1.0MHz
26
pF
SWITCHING PARAMETERS
Total Gate Charge
QG(TOT)
20
25
nC
Gate to Source Charge
QGS
2
3
nC
Gate to Drain Charge
QGD
VGS=10V, VDS=320V, ID=2.5A
8
12
nC
Turn-ON Delay Time
tD(ON)
10
ns
Rise Time
tR
25
ns
Turn-OFF Delay Time
tD(OFF)
46
ns
Fall-Time
tF
VDD=200V, ID=2.5A, RG=24Ω,
RD=78 Ω
25
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
2.5
A
Maximum Body-Diode Pulsed Current
ISM
TC=25°C
10
A
Drain-Source Diode Forward Voltage
VSD
IS=2.5A, VGS=0V
1.2
V
Body Diode Reverse Recovery Time
trr
200
ns
Body Diode Reverse Recovery Charge
QRR
IS=2.5A, VGS=0V, dI/dt=100A/µs
2.0
µC



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