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2N5401L-X-T92-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 2N5401L-X-T92-R
상세설명  HIGH VOLTAGE SWITCHING TRANSISTOR
PDF  4 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2N5401L-X-T92-R 데이터시트(HTML) 2 Page - Unisonic Technologies

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2N5401
PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R201-001,E
ABSOLUTE MAXIMUM RATING (Ta=25°C , unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-160
V
Collector-Emitter Voltage
VCEO
-150
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-600
mA
Collector Dissipation
TO-92
PC
625
mW
SOT-89
500
mW
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
Collector-Base Breakdown Voltage
BVCBO
IC = -100μA, IE = 0
-160
V
Collector-Emitter Breakdown Voltage
BVCEO
IC = -1mA, IB = 0
-150
V
Emitter-Base Breakdown Voltage
BVEBO
IE = -10μA, IC = 0
-5
V
Collector Cut-off Current
ICBO
VCB = -120V, IE = 0
-50
nA
Emitter Cut-off Current
IEBO
VEB = -3V, IC = 0
-50
nA
DC Current Gain (Note)
hFE1
hFE2
hFE3
VCE = -5V, IC = -1mA
VCE = -5V, IC = -10mA
VCE = -5V, IC = -50mA
80
80
80
400
Collector-Emitter Saturation Voltage
VCE(SAT)
IC = -10mA, IB = -1mA
IC = -50mA, IB = -5mA
-0.2
-0.5
V
Base-Emitter Saturation Voltage
VBE(SAT)
IC = -10mA, IB = -1mA
IC = -50mA, IB = -5mA
-1
-1
V
Current Gain Bandwidth Product
fT
VCE = -10V, IC = -10mA
f = 100MHz
100
400
MHz
Output Capacitance
COB
VCB = -10V, IE = 0, f = 1MHz
6.0
pF
Noise Figure
NF
IC = -0.25mA, VCE = -5V
RS = 1kΩ, f = 10Hz ~ 15.7kHz
8
dB
Note: Pulse test: PW<300μs, Duty Cycle<2%
CLASSIFICATION OF hFE
RANK
A
B
C
RANGE
80-170
150-240
200-400



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