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IL766 데이터시트(PDF) 1 Page - Siemens Semiconductor Group |
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IL766 데이터시트(HTML) 1 Page - Siemens Semiconductor Group |
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1 / 3 page ![]() 5–1 FEATURES • Internal RBE for Better Stability • High Current Transfer Ratios, VCE=5 V IL/ILD766-1: 500% at IF=2 mA IL/ILD766-2: 500% at IF=1.0 mA •BVCEO >60 V • AC or Polarity Insensitive Inputs • Built-In Reverse Polarity Input Protection • Industry Standard DIP Package • Underwriters Lab File #E52744 DESCRIPTION The IL/ILD766 are bidirectional input optically cou- pled isolators. They consist of two Gallium Ars- enide infrared emitting diodes coupled to a silicon NPN photodarlington per channel. The IL766 are single channel optocouplers. The ILD766 has two isolated channels in a single DIP package. They are designed for applications requiring detection or monitoring of AC signals. Maximum Ratings Emitter (Each Channel) Continuous Forward Current .........................60 mA Power Dissipation at 25 °C Single Channel ....................................... 200 mW Dual Channel............................................ 90 mW Derate Linearly from 25 °C Single Channel ................................... 2.6 mW/ °C Dual Channel...................................... 1.2 mW/ °C Detector (Each Channel) Collector-Emitter Breakdown Voltage .............. 60 V Collector-Base Breakdown Voltage ................. 70 V Power Dissipation at 25 °C .........................100 mW Derate Linearly from 25 °C ...................1.33 mW/°C Package Isolation Test Voltage (t= 1 sec.)................... 7500 VACPK/5300 VACRMS Isolation Resistance TA=25°C........................................................≥10 12 Ω TA=100°C .....................................................≥10 11 Ω Total Power Dissipation at 25 °C Ambient (LED Plus Detector) Single Channel ....................................... 250 mW Dual Channel.......................................... 400 mW Derate Linearly from 25 °C Single Channel ................................... 3.3 mW/ °C Dual Channel .................................... 5.3 mW/ °C Creepage ............................................... 7 mm min. Clearance............................................... 7 mm min. Comparative Tracking Index per DIN IEC 112/VDE303, part 1 ......................... 175 Storage Temperature.................... –55 °C to +150°C Operating Temperature ................ –55 °C to +100°C Lead Soldering Time at 260 °C.................... 10 sec. Electrical Characteristics (TA=25°C) Sym Min Typ Max. Unit Condition Emitter Forward Voltage VF 1.2 1.5 V IF=±10 mA Detector Breakdown Voltage, Collector-Emitter Collector-Base BVCEO BVCBO 60 60 75 90 V V IC=1 mA IC=10 µA Leakage Current, Collector-Emitter ICEO 10 100 nA VCE=10 V Package Saturation Voltage, Collector-Emitter VCEsat 1.0 V IF=±10 mA, IC=10 mA DC Current Transfer Ratio IL766/ILD766-1 IL766-2 CTR 500 500 % % IF=±2 mA, VCE=5 V IF=±1.0 mA, VCE=5 V Rise Time, Fall Time 100 µsVCC=10 V, IF=±2 mA, RL=100 Ω Dimensions in inches (mm) 1 2 3 6 5 4 Base Collector Emitter Anode/ Cathode Cathode/ Anode NC Emitter Collector Collector Emitter 1 2 3 4 8 7 6 5 Anode/ Cathode Cathode/ Anode Anode/ Cathode Cathode/ Anode Pin One ID. .255 (6.48) .268 (6.81) 3 4 6 5 .379 (9.63) .390 (9.91) .030 (.76) .045 (1.14) 4 ° Typ. .100 (2.54)Typ. 10 ° Typ. 3 °–9° .305 Typ. (7.75) Typ. .018 (.46) .022 (.56) .008 (.20) .012 (.30) .115 (2.92) .135 (3.43) 1 2 8 7 .130 (3.30) .150 (3.81) .030 (.76 ) .040 (1.02) .010 (.25) .014 (.35) .110 (2.79) .150 (3.81) .130 (3.30) .150 (3.81) .020 (.051) min. .300 (7.62) Typ. .031 (0.80) .035 (0.90) .039 (1.00) min. .018 (0.45) .022 (0.55) .335 (8.50) .343 (8.70) 6 5 4 1 2 3 18 ° Typ. .300 (7.62) .347 (8.82) 4 ° Typ. .100 (2.54) Typ. .248 (6.30) .256 (6.50) Pin One I.D. Dual Channel Single Channel SINGLE CHANNEL IL766 DUAL CHANNEL ILD766 BIDIRECTIONAL INPUT DARLINGTON OPTOCOUPLERS |
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