IL766B datasheet(1/1 Pages) SIEMENS

부품명	IL766B

상세설명	BIDIRECTIONAL INPUT OPTOCOUPLER

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제조업체	SIEMENS [Siemens Semiconductor Group]

홈페이지	http://www.siemens.com/

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5–1

FEATURES

• Very High Current Transfer Ratio

IL766B-1: 400% at IF=1 mA, VCE=5 V

IL766B-2: 900% at IF=0.5 mA, VCE=5 V

• Internal RBE for Better Stability

•BVCEO >60 V

•

Isolation Test Voltage, 5300 VACRMS

• AC or Polarity Insensitive Inputs

• No Base Connection

•

High Insulation Resistance, 1011

Ω

Typical

•

Standard Plastic DIP Package

• Underwriters Lab File #E52744

DESCRIPTION

The IL766B is a bidirectional input, optically cou-

pled isolator consisting of two Gallium Arsenide

infrared emitters and a silicon photodarlington

sensor.

Maximum Ratings (at 25

°C)

Emitter (Drive Circuit)

Continuous Forward Current .........................60 mA

Power Dissipation at 25

°C..........................200 mW

Derate Linearly from 55

°C......................2.6 mW/°C

Detector (Load Circuit)

Collector-Emitter Breakdown Voltage.............. 60 V

Collector-Base Breakdown Voltage................. 70 V

Power Dissipation at 25

°C Ambient ...........200 mW

Derate Linearly from 25

°C......................2.6 mW/°C

Package

UL Isolation Test Voltage

(t=1 sec.) ....................................... 5300 VACRMS

Dissipation at 25

°C.....................................250 mW

Derate Linearly from 25

°C .....................3.3 mW/°C

Creepage ................................................ 7 min mm

Clearance................................................ 7 min mm

Isolation Resistance

VIO=500 V, TA=25°C ................................. 10

12

Ω

VIO=500 V, TA=100°C ............................... 10

11

Ω

Storage Temperature................... –55

°C to +150°C

Operating Temperature ................–55

°C to +100°C

Lead Soldering Time at 260

°C .................... 10 sec.

Characteristics (TA=25°C)

Symbol

Min.

Typ.

Max.

Unit

Condition

Emitter

Forward Voltage

VF

1.25

1.5

V

IF=±10 mA

Detector

Breakdown Voltage

Collector-Emitter

BVCEO

60

V

IC=1 mA,

IF=0

Leakage Current

Collector-Emitter

ICEO

1.0

100

nA

VCE=10 V,

IF=0

Package

Current Transfer

Ratio

CTR

IL766B-1

400

%

IF=±1 mA,

VCE=5 V

IL766B-2

900

%

IF=±0.5 mA,

VCE=5 V

Saturation Voltage,

Collector-Emitter

VCEsat

1.0

V

IC=10 mA,

IF=±10 mA

Turn-On,Turn-Off

Time

ton, toff

200

µsV

CC=5 V,

IF=±2 mA,

RL=100 Ω

Dimensions in inches (mm)

1

2

3

6

5

4

NC

Collector

Emitter

Anode/

Cathode

.010 (.25)

.014 (.35)

.110 (2.79)

.150 (3.81)

.130 (3.30)

.150 (3.81)

.020 (.051) Min.

.300 (7.62)

Typ.

.031 (0.80)

.035 (0.90)

.100 (2.54) Typ.

.039

(1.00)

Min.

.018 (0.45)

.022 (0.55)

.248 (6.30)

.256 (6.50)

.335 (8.50)

.343 (8.70)

Pin One ID.

6

5

4

1

2

3

18

° Typ.

.300 (7.62)

.347 (8.82)

4

°

Typ.

Cathode/

Anode

IL766B

BIDIRECTIONAL INPUT

OPTOCOUPLER

유사한 부품 번호 - IL766B

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	IL766B	101Kb / 5P	Optocoupler, Photodarlington Output, AC Input, Internal RBE 09-Nov-05
	IL766B-1	101Kb / 5P	Optocoupler, Photodarlington Output, AC Input, Internal RBE 09-Nov-05
	IL766B-2	101Kb / 5P	Optocoupler, Photodarlington Output, AC Input, Internal RBE 09-Nov-05
	IL766B-2X006	101Kb / 5P	Optocoupler, Photodarlington Output, AC Input, Internal RBE 09-Nov-05

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IL766B 데이터시트(PDF) 1 Page - Siemens Semiconductor Group

IL766B 데이터시트(HTML) 1 Page - Siemens Semiconductor Group

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