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2SA1700L-X-TN3-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 2SA1700L-X-TN3-R
상세설명  HIGH VOLTAGE DRIVER APPLICATION
PDF  3 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2SA1700L-X-TN3-R 데이터시트(HTML) 2 Page - Unisonic Technologies

  2SA1700L-X-TN3-R Datasheet HTML 1Page - Unisonic Technologies 2SA1700L-X-TN3-R Datasheet HTML 2Page - Unisonic Technologies 2SA1700L-X-TN3-R Datasheet HTML 3Page - Unisonic Technologies  
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2SA1700
PNP EPITAXIAL SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R213-011.B
ABSOLUTE MAXIMUM RATING ( TA=25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-400
V
Collector-Emitter Voltage
VCEO
-400
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-200
mA
Collector Current (PULSE)
ICP
-400
mA
Power Dissipation
PD
1
W
10 (TC=25℃)
W
Junction Temperature
TJ
150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Breakdown Voltage
BVCBO
IC= -10μA, IE=0
-400
V
Collector-Emitter Breakdown Voltage
BVCEO
IC= -1mA, IB=0, RBE=∞
-400
V
Emitter-Base Breakdown Voltage
BVEBO
IE= -10μA, IC=0
-5
V
Collector Cutoff Current
ICBO
VCB= -300V, IE=0
-0.1
μA
Emitter Cutoff Current
IEBO
VEB= -4V, IC=0
-0.1
μA
DC Current Transfer Ratio
hFE
VCE= -10V, IC= -50mA
60
200
Collector-Emitter Saturation Voltage
VCE(SAT) IC= -50mA, IB= -5mA
-0.8
V
Base-Emitter Saturation Voltage
VBE(SAT) IC= -50mA, IB= -5mA
-1.0
V
Output Capacitance
COB
VCB= -30V, f=1MHz
5
pF
Reverse Transfer Capacitance
CRE
VCB= -30V, f=1MHz
4
pF
Gain-Bandwidth Product
fT
VCE= -30V, IC= -10mA
70
MHz
Turn-on Time
tON
See test circuit
0.25
μs
Turn-off Time
tOFF
See test circuit
5
μs



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