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2SB1132G-X-AB3-R 데이터시트(PDF) 4 Page - Unisonic Technologies |
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2SB1132G-X-AB3-R 데이터시트(HTML) 4 Page - Unisonic Technologies |
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4 / 5 page ![]() 2SB1132 PNP SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 4 of 5 www.unisonic.com.tw QW-R208-016.C TYPICAL CHARACTERISTICS(Cont.) 0 -0.2 -0.5 -1 -2 -0.05 -0.01 Collector to Emitter Voltage, VCE(V) Safe Operation Area -0.02 -5 -10 -20 -50 -0.1 -0.2 0.001 0.01 0.1 1 10 1 0.1 Time, t(s) Transient Thermal Resistance 100 100 1000 10 1000 -1 20 Emitter Current, IB(mA) Gain Bandwidth Product vs. Emitter Current 50 -2 -5 -20 -50 -10 100 200 -100 TA=25°C VCE = -5V -0.5 10 Collector to Base Voltage, VCB(V) Collector Output Capacitance vs.Collector-Base Voltage 20 -1 -2 -10 -20 -5 50 100 f=1MHz TA=25°C IE=0A -0.5 -1 -2 -5 TA=25°C *Single pulse TA=25°C Power Derating 1.6 0.6 25 50 75 150 100 1.4 1.2 1 0.8 Ambient Temperature, TA ( ) 0 0.4 0.2 0.0 125 175 TO-252 SOT-89 |
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