2SK508

Preliminary

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 2

www.unisonic.com.tw

QW-R206-101.a

PARAMETER

SYMBOL

RATINGS

UNIT

Gate to Drain Voltage

-15

V

Gate to Source Voltage

-15

V

15

V

Drain Current (DC)

50

mA

Gate Current (DC)

5

mA

Power Dissipation

200

mW

Junction Temperature

150

°C

Storage Temperature

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Gate Cut-Off Current

-1.0

nA

Zero Gate Voltage Drain Current (Note 1)

10

20

50

mA

Gate to Source Cut-Off Voltage

-0.6

-1.4

-3.5

V

Forward Transfer Admittance (Note 1)

14

19

mS

14

26

mS

Input Capacitance

4.8

pF

Feedback Capacitance

1.6

pF

MARKING

K51

K52

K53

10 ~ 20

15 ~ 30

25 ~ 50

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.