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2SD1857G-R-T92-B 데이터시트(PDF) 3 Page - Unisonic Technologies |
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2SD1857G-R-T92-B 데이터시트(HTML) 3 Page - Unisonic Technologies |
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3 / 3 page ![]() 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 3 of 3 www.unisonic.com.tw QW-R201-057,F TYPICAL CHARACTERISTICS Collector to Emitter Voltage: VCE(V) 12 0 0 0.2 0.8 0.4 0.6 4 35 1.0 IB=0mA 10mA 20mA 30mA 40mA 50mA 60mA 70mA 80mA 90mA 100mA 0.01 0.02 0.05 2 1000 500 200 100 50 20 5 1 0.1 0.2 0.5 Collector Current,IC (A) 2 1 TA=25°C 10 510 VCE=10V 5V 0.01 0.02 0.05 2 10 5 2 1 0.5 0.2 0.05 0.01 0.1 0.2 0.5 Collector Current,IC (A) 0.02 1 TA=25°C 0.1 510 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. |
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