UNISONIC TECHNOLOGIES CO., LTD

4N90

Preliminary

Power MOSFET

www.unisonic.com.tw

1 of 6

Copyright © 2011 Unisonic Technologies Co., Ltd

QW-R502-479.b

4 Amps, 900 Volts

N-CHANNEL POWER MOSFET

DESCRIPTION

The UTC 4N90 is a N-channel enhancement MOSFET adopting

UTC’s advanced technology to provide customers with DMOS,

planar stripe technology. This technology is designed to meet the

requirements of the minimum on-state resistance and perfect

switching performance. It also can withstand high energy pulse in

the avalanche and communication mode.

The UTC 4N90 is particularly applied in high efficiency switch

mode power supplies.

FEATURES

* Typically 17nC low gate charge

* High switching speed

* 100% avalanche tested

* Improved dv/dt capability

SYMBOL

1.Gate

3.Source

2.Drain

TO-220

1

1

TO-220F

TO-252

1

ORDERING INFORMATION

Ordering Number

Pin Assignment

Lead Free

Halogen Free

Package

1

2

3

Packing

4N90L-TA3-T

4N90G-TA3-T

TO-220

G

D

S

Tube

4N90L-TF3-T

4N90G-TF3-T

TO-220F

G

D

S

Tube

4N90L-TN3-R

4N90G-TN3-R

TO-252

G

D

S

Tape Reel

Note: Pin Assignment: G: Gate D: Drain S: Source