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IMZ2AG-AL6-R 데이터시트(PDF) 2 Page - Unisonic Technologies |
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IMZ2AG-AL6-R 데이터시트(HTML) 2 Page - Unisonic Technologies |
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2 / 3 page ![]() IMZ2A DUAL TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R215-002,C ABSOLUTE MAXIMUM RATINGS (Ta=25°C) LIMITS PARAMETER SYMBOL TR1 TR2 UNIT Collector-Base Voltage VCBO -60 60 V Collector-Emitter Voltage VCEO -50 50 V Emitter-Base Voltage VEBO -6 7 V Collector Current IC -150 150 mA Collector Power Dissipation (Total) Pc 300 (Note 1) mW Junction Temperature TJ 150 °C Storage Temperature TSTG -55~+150 °C Note: 1. 200mW per element must not be exceeded. 2. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25°C) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT TR1 Collector-Base Breakdown Voltage BVCBO IC = -50µA -60 V Collector-Emitter Breakdown Voltage BVCEO IC = -1mA -50 V Emitter-Base Breakdown Voltage BVEBO IE= -50µA -6 V Collector Cut-Off Current ICBO VCB= -60V -0.1 µA Emitter Cut-Off Current IEBO VEB= -6V -0.1 µA Collector-Emitter Saturation Voltage VCE(SAT) IC / IB = -50mA/-5mA -0.5 V DC Current Transfer Ratio hFE VCE= -6V, IC = -1mA 120 560 - Transition Frequency fT VCE=-12V, IE=2mA, f=100MHz (Note) 140 MHz Output Capacitance Cob VCB= -12V,IE=0A, f=1MHz 4 5 pF TR2 Collector-Base Breakdown Voltage BVCBO IC =50µA 60 V Collector-Emitter Breakdown Voltage BVCEO IC = 1mA 50 V Emitter-Base Breakdown Voltage BVEBO IE= 50µA 7 V Collector Cut-Off Current ICBO VCB=60V 0.1 µA Emitter Cut-Off Current IEBO VEB=7V 0.1 µA Collector-Emitter Saturation Voltage VCE(SAT) IC / IB = 50mA/5mA 0.4 V DC Current Transfer Ratio hFE VCE= 6V, IC = 1mA 120 560 Transition Frequency fT VCE=12V, IE=-2mA, f=100MHz (Note) 180 - MHz Output Capacitance Cob VCB= 12V, IE=0A, f=1MHz 2 3.5 pF Note: Transition frequency of the device. |
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