MMBTA14-AE3-R datasheet(2/3 Pages) UTC

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MMBTA14

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R206-038.B

ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

Collector-Emitter Voltage

VCES

Emitter-Base Voltage

VEBO

Collector Dissipation (TC=25°C)

350

Collector Current

500

Junction Temperature

+150

°C

Storage Temperature

TSTG

-40 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector-Emitter Breakdown Voltage

BVCES

IC=100µA, IB=0

Collector CutOff Current

ICBO

VCB=30V, IE=0

100

Emitter CutOff Current

IEBO

VEB=10V, IC=0

100

DC Current Gain

hFE

VCE=5V, IC=100 mA (Note)

20000

Collector-Emitter Saturation Voltage

VCE(SAT)

IC=100mA, IB=0.1mA (Note)

1.5

Base-Emitter on Voltage

VBE(ON)

VCE=5V, IC=100mA (Note)

2.0

Current Gain Bandwidth Product

VCE=5V, IC=10mA, f=100MHz

125

MHz

Note: Pulse Width<300µs, Duty Cycle

≤2%

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