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MMDT2222AG-AL6-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 MMDT2222AG-AL6-R
상세설명  DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
PDF  3 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

MMDT2222AG-AL6-R 데이터시트(HTML) 2 Page - Unisonic Technologies

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MMDT2222A
Preliminary
DUAL TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R218-016.a
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
75
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current-Continuous
IC
600
mA
Power Dissipation (Note 2)
PD
200
mW
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Maximum combined dissipation.
THERMAL DATA (TA=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
625
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
(Note)
Collector-Base Breakdown Voltage
V(BR)CBO IC=10μA, IE=0
75
V
Collector-Emitter Breakdown Voltage
V(BR)CEO IC=10mA, IB=0
40
V
Emitter-Base Breakdown Voltage
V(BR)EBO IE=10μA, IC=0
6.0
V
VCB=60V, IE=0
10
nA
Collector-Current
ICBO
VCB=60V, IE=0, TA=150°C
10
μA
Collector- Current
ICEX
VCE=60V, VEB(OFF)=3.0V
10
nA
Emitter- Current
IEBO
VEB=3.0V, IC=0
10
nA
Base- Current
IBL
VCE=60V, VEB(OFF)=3.0V
20
nA
ON CHARACTERISTICS
(Note)
IC=100µA, VCE=10V
35
IC=1.0mA, VCE=10V
50
IC=10mA, VCE=10V
75
IC=150mA, VCE=10V
100
300
IC=500mA, VCE=10V
40
IC=10mA, VCE=10V, TA=-55
°C
50
DC Current Gain
hFE
IC=150mA, VCE=1.0V
35
IC=150mA, IB=15mA
0.3
V
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=500mA, IB=50mA
1.0
V
IC=150mA, IB=15mA
0.6
1.2
V
Base-Emitter Saturation Voltage
VBE(SAT)
IC=500mA, IB=50mA
2.0
V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
COBO
VCB=10V, f=1.0MHz, IE=0
8
pF
Input Capacitance
CIBO
VEB=0.5V, f=1.0MHz, IC=0
25
pF
Current Gain-Bandwidth Product
fT
VCE=20V, IC=20mA, f=100MHz
300
MHz
Noise Figure
NF
VCE=10V, IC=100μA, RS=1.0kΩ, f=1.0kHz
4.0
dB
SWITCHING CHARACTERISTICS
Delay Time
tD
10
ns
Rise Time
tR
VCC=30V,IC=150mA,VBE(OFF)=-0.5V,
IB1=15mA
25
ns
Storage Time
tS
225
ns
Fall Time
tF
VCC=30V, IC=150mA, IB1=IB2=15mA
60
ns
Note: Short duration pulse test used to minimize self-heating effect.



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