전자부품 데이터시트 검색엔진
  Korean  ▼
ALLDATASHEET.CO.KR

X  

Preview PDF HTML

MMDT3906L-AL6-R 데이터시트(PDF) 3 Page - Unisonic Technologies

부품명 MMDT3906L-AL6-R
상세설명  DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
PDF  4 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

MMDT3906L-AL6-R 데이터시트(HTML) 3 Page - Unisonic Technologies

  MMDT3906L-AL6-R Datasheet HTML 1Page - Unisonic Technologies MMDT3906L-AL6-R Datasheet HTML 2Page - Unisonic Technologies MMDT3906L-AL6-R Datasheet HTML 3Page - Unisonic Technologies MMDT3906L-AL6-R Datasheet HTML 4Page - Unisonic Technologies  
Zoom Inzoom in Zoom Outzoom out
 3 / 4 page
background image
MMDT3906
Preliminary
PNP EPITAXIAL SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
3 of 4
www.unisonic.com.tw
QW-R218-014.a
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
-5.0
V
Collector Current-Continuous
IC
-200
mA
Power Dissipation
PD
200
mW
Junction Temperature
TJ
-55~+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
625
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF Characteristics (Note)
Collector-Base Breakdown Voltage
V(BR)CBO IC=-10 µA, IE=0
-40
V
Collector-Emitter Breakdown Voltage
V(BR)CEO IC=-1.0mA, IB=0
-40
V
Emitter-Base Breakdown Voltage
V(BR)EBO IE=-10µA, IC=0
-5.0
V
Collector Cutoff Current
ICEX
VCB= -30V, VEB(OFF)=-3.0V
-50
nA
Base Cutoff Current
IBL
VEB=-30V, VEB(OFF)=-3.0V
-50
nA
ON Characteristics (Note)
IC=-100μA, VCE=-1.0V
60
IC=-1.0mA, VCE=-1.0V
80
IC=-10mA, VCE=-1.0V
100
300
IC=-50mA, VCE=-1.0V
60
DC Current Gain
hFE
IC=-100mA, VCE=-1.0V
30
IC=-10mA, IB=-1.0mA
-0.25
V
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=-50mA, IB=-5.0mA
-0.40
V
IC=-10mA, IB=-1.0mA
-0.65
-0.85
V
Base-Emitter Saturation Voltage
VBE(SAT)
IC=-50mA, IB=-5.0mA
-0.95
V
Small Signal Characteristics
Output Capacitance
COBO
VCB=-5.0V, IE=0, f=1.0MHz
4.5
pF
Input Capacitance
CIBO
VEB=-0.5V, IC=0, f=1.0MHz
10
pF
Input Impedance
hIE
2.0
12
kΩ
Voltage Feedback Ratio
hRE
0.1
10 ×10
-4
Small Signal Current Gain
hFE
100
400
Output Admittance
hOE
VCE=10V, IC=1.0mA, f=1.0kHz
3.0
60
μS
Current Gain-Bandwidth Product
fT
VCE=-20V, IC=-10mA, f=100MHz
250
MHz
Noise Figure
NF
VCE=-5.0V, IC=-100μA,
RS=1.0kΩ, f=1.0kHz
4.0
dB
Switching Characteristics
Delay Time
tD
35
ns
Rise Time
tR
VCC=-3.0V, IC= -10mA,
VBE(OFF)=0.5V, IB1= -1.0mA
35
ns
Storage Time
tS
225
ns
Fall Time
tF
VCC=-3.0V, IC= -10mA,
IB1= IB2=-1.0mA
75
ns
Note: Short duration pulse test used to minimize self-heating effect.



Html Pages

1 2 3 4


데이터시트 다운로드

Go To PDF Page


링크 URL



ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ] 

Alldatasheet는?   |   광고문의   |   운영자에게 연락하기   |   개인정보취급방침   |   링크 투 데이터시트    |   링크교환   |   제조사별 검색
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com