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14N50L-TQ2-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 14N50L-TQ2-R
상세설명  14A, 500V N-CHANNEL POWER MOSFET
PDF  6 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
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14N50L-TQ2-R 데이터시트(HTML) 2 Page - Unisonic Technologies

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14N50
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 6
www.unisonic.com.tw
QW-R502-720.a
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
500
V
Gate-Source Voltage
VGSS
±30
V
Continuous Drain Current
ID
14
A
Pulsed Drain Current (Note 2)
IDM
48
A
Avalanche Current (Note 2)
IAR
14
A
Single Pulsed Avalanche Energy (Note 3)
EAS
400
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation (TC=25°C)
PD
150
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 9.3mH, IAS = 13A, VDD = 50V, RG= 25Ω ,Starting TJ = 25°C
4. ISD≤13.A, di/dt ≤200A/μs, VDD≤ BVDSS, Starting TJ= 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
62.5
°C/W
Junction to Case
θJC
0.83
°C/W
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 1mA
500
V
Drain-Source Leakage Current
IDSS
VDS = 500V, VGS = 0V
10
μA
Gate-Source Leakage Current
IGSS
VGS = 20V, VDS = 0V
100
nA
VGS = -20V, VDS = 0V
-100
nA
Breakdown Voltage Temperature Coefficient
BV
△
DSS/△TJ
ID=250mA,Referenced to 25°C
0.5
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 100μA
3
3.75 4.5
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 6A
0.34 0.38
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS=25V, VGS=0V,
f=1.0MHz
2000
pF
Output Capacitance
COSS
238
pF
Reverse Transfer Capacitance
CRSS
55
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
VDD =250V, ID =14A,
RG =25Ω (Note 1,2)
24
nS
Turn-On Rise Time
tR
16
nS
Turn-Off Delay Time
tD(OFF)
54
nS
Turn-Off Fall Time
tF
12
nS
Total Gate Charge
QG
VDS=400V, ID=12A,
VGS=10 V (Note 1,2)
69
92
nC
Gate-Source Charge
QGS
12
nC
Gate-Drain Charge
QGD
31
nC



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