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PZT2907AL-AA3-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 PZT2907AL-AA3-R
상세설명  PNP GENERAL PURPOSE AMPLIFIER
PDF  4 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

PZT2907AL-AA3-R 데이터시트(HTML) 2 Page - Unisonic Technologies

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PZT2907A
Preliminary
PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R207-023.C
ABSOLUTE MAXIMUM RATING (Ta=25°С unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
VCEO
-60
V
Collector-Base Voltage
VCBO
-60
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current Continuous
IC
-800
mA
Power Dissipation
PD
1.3
W
Junction Temperature
TJ
+150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Mounted on PCB with 3mm copper at each terminal
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Thermal Resistance
θJA
90
℃
/W
Note: Mounted on PCB with 3mm copper at each terminal
ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Note)
BVCEO IC=-10mA, IB=0
-
60
V
Collector-Base Breakdown Voltage
BVCBO IC=-10μA, IE=0
-60
V
Emitter-Base Breakdown Voltage
BVEBO IE=-10μA , IC=0
-
5
V
Base Cutoff Current
IB
VCB=-30V, VEB=-0.5V
-
50
nA
Collector Cutoff Current
ICEX
VCE=-30V, VBE=-0.5V
-
50
nA
VCB=-50V, IE=0
-
0.02
μA
Collector Cutoff Current
ICBO
VCB=-50V, IE=0, TA=150°С
-
20
μA
ON CHARACTERISTICS
IC=-0.1mA, VCE=-10V
75
IC=-1.0 mA, VCE=-10V
100
IC=-10 mA, VCE=-10V
100
IC=-150 mA, VCE=-10V (Note)
100
300
DC Current Gain
hFE
IC=-500 mA, VCE=-10V (Note)
50
IC=-150 mA, IB=-15mA
-
0.4
V
Collector-Emitter Saturation Voltage (Note)
VCE(SAT)
IC=-500 mA, IB=-50mA
-
1.6
V
IC=-150 mA, IB=-15mA (Note)
-
1.3
V
Base-Emitter Saturation Voltage
VBE(SAT)
IC=-500 mA, IB=-50mA
-
2.6
V
SMALL SIGNAL CHARACTERISTICS
Current Gain – Bandwidth Product
fT
IC=-50mA, VCE=-20V, f=100MHz
200
MHz
Output Capacitance
Cob
VCB=-10V, IE=0, f=100kHz
8
pF
Input Capacitance
Cib
VEB=-2V, IC=0, f=100kHz
30
pF
SWITCHING CHARACTERISTICS
Turn-on Time
tON
45
ns
Delay Time
tDLY
10
ns
Rise Time
tR
VCC=30V, IC=-150mA,
IB1=-15mA
40
ns
Turn-off Time
tOFF
100
ns
Storage Time
tS
80
ns
Fall Time
tF
VCC=6V, IC=-150mA,
IB1= IB2=-15mA
30
ns
Note: Pulse Test: Pulse Width
≤ 300ms, Duty Cycle≤2.0%



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