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PZTA92G-AA3-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 PZTA92G-AA3-R
상세설명  HIGH VOLTAGE TRANSISTOR
PDF  4 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

PZTA92G-AA3-R 데이터시트(HTML) 2 Page - Unisonic Technologies

  PZTA92G-AA3-R Datasheet HTML 1Page - Unisonic Technologies PZTA92G-AA3-R Datasheet HTML 2Page - Unisonic Technologies PZTA92G-AA3-R Datasheet HTML 3Page - Unisonic Technologies PZTA92G-AA3-R Datasheet HTML 4Page - Unisonic Technologies  
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PZTA92/93
PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R207-006.D
ABSOLUTE MAXIMUM RATING (TA=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
PZTA92
VCBO
-300
V
PZTA93
-200
V
Collector-Emitter Voltage
PZTA92
VCEO
-300
V
PZTA93
-200
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-500
mA
Collector Power Dissipation
Pc
1
W
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Breakdown Voltage
BVCBO
IC=-100μA, IE=0
PZTA92
-300
V
PZTA93
-200
V
Collector-Emitter Breakdown Voltage
BVCEO
IC =-1mA, IB=0
PZTA92
-300
V
PZTA93
-200
V
Emitter-Base Breakdown Voltage
BVEBO
IE=-100μA, IC =0
-5
V
Collector Cut-Off Current
ICBO
VCB=-200V, IE=0
PZTA92
-0.25
μA
VCB=-160V, IE=0
PZTA93
-0.25
μA
Emitter Cut-Off Current
IEBO
VEB=-3V, IC =0
-0.10
μA
DC Current Gain (Note)
hFE
VCE=-10V, IC =-1mA
60
VCE=-10V, IC =-10mA
80
VCE=-10V, IC =-30mA
80
Collector-Emitter Saturation Voltage
VCE(SAT) IC =-20mA, IB=-2mA
-0.5
V
Base-Emitter Saturation Voltage
VBE(SAT) IC =-20mA, IB=-2mA
-0.90
V
Current Gain Bandwidth Product
fT
VCE=-20V,Ic=-10mA, f=100MHz
50
MHz
Collector Base Capacitance
CCB
VCB=-20V, IE=0, f=1MHz
PZTA92
6
pF
PZTA93
8
pF
Note: Pulse test: PW<300μs, Duty Cycle<2%, VCE (SAT) <200mV (Class SIN)



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