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60N06L-TQ2-R 데이터시트(PDF) 6 Page - Unisonic Technologies |
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60N06L-TQ2-R 데이터시트(HTML) 6 Page - Unisonic Technologies |
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6 / 8 page ![]() 60N06 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 6 of 8 www.unisonic.com.tw QW-R502-121.C TYPICAL CHARACTERISTICS Gate-to-Source Voltage, VGS (V) 20 030 50 Transconductance 10 50 40 20 70 0 40 Drain Current, ID (A) 40 060 0.012 On-Resistance vs. Drain Current 20 0.016 0.008 0.004 0.020 0 80 60 30 10 Tc = -55℃ 25℃ 125℃ VGS = 10V 100 Drain-to-Source Voltage, VDS (V) 20 040 Capacitance 10 2000 1000 3000 0 30 Total Gate Charge, QG (nC) 20 0 Gate Charge 10 4 2 10 0 30 2500 1500 500 Ciss VGS = 10V ID = 60A 40 Coss Crss 6 8 |
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