UBV45 datasheet(2/4 Pages) UTC

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UBV45

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R201-081,D

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector Emitter Voltage (VBE = 0)

VCES

700

Collector Emitter Voltage (IB = 0)

VCEO

400

Emitter Base Voltage (IC = 0)

VEBO

Collector Current

0.75

Collector Peak Current (tp < 5 ms)

ICM

1.5

Base Current

0.4

Base Peak Current (tp < 5 ms)

IBM

0.75

Total Dissipation at Ta = 25°C

0.95

Junction Temperature

+150

°C

Storage Temperature

TSTG

-40 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERAMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Thermal Resistance Junction-ambient

θJA

130

°C /W

ELECTRICAL CHARACTERISTICS (Ta= 25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Collector Emitter Sustaining Voltage (IB = 0)

(Note)

VCEO(SUS) IC = 1 mA

400

IC = 0.2 A , IB = 40 mA

0.2

0.5

IC = 0.3 A , IB = 75 mA

0.3

Collector Emitter Saturation Voltage (Note)

VCE(SAT)

IC = 0.4 A , IB = 135 mA

0.4

1.5

IC = 0.2 A , IB = 40 mA

Base Emitter Saturation Voltage (Note)

VBE(SAT)

IC = 0.3 A , IB = 75 mA

1.2

Emitter Cut off Current (IC = 0)

IEBO

VEB = 9 V

Collector Cut off Current (VBE = -1.5V)

ICEV

VCE = 700 V

250

μ A

IC = 0.2 A, VCE = 5 V

DC Current Gain

hFE*

IC = 0.4 A, VCE = 5 V

Inductive Load Fall Time

IC = 0.2 A , VCLAMP = 300 V

IB1 = -IB2 = 40 mA , L = 3 mH

0.3

μ s

Note: Pulsed: Pulse duration = 300μs, duty cycle = 1.5 %

INDUCTIVE LOAD SWITCHING TEST CIRCUIT

(3)

VCE

Vcc

(1)

RBB(2)

VBB

IB1

(1) Fast electronic switch

(2) Non-inductive Resistor

(3) Fast recovery rectifier

VCLAMP

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