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5302DG-TN3-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 5302DG-TN3-R
상세설명  HIGH VOLTAGE NPN TRANSISTOR WITH DIODE
PDF  3 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

5302DG-TN3-R 데이터시트(HTML) 2 Page - Unisonic Technologies

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5302D
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R213-018. E
ABSOLUTE MAXIMUM RATING (TA=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
800
V
Collector-Emitter Voltage
VCEO
400
V
Emitter-Base Voltage
VEBO
10
V
Collector Current
IC
2
A
Collector Peak Current (tP<5ms)
ICM
4
A
Base Current
IB
1
A
Base Peak Current (tP<5ms)
IBM
2
A
Power Dissipation (TC≤25°С)
TO-126
PD
12.5
W
TO-92
1.6
TO-251/ TO-252
25
Junction Temperature
TJ
+150
°С
Storage Temperature
TSTG
-65 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
TO-126
θJA
122
°С/W
TO-92
160
TO-251/ TO-252
100
Junction to Case
TO-126
θJC
10
°С/W
TO-92
80
TO-251/ TO-252
5
ELECTRICAL CHARACTERISTICS (TA = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
BVCEO
IC=10mA, IE=0 (Note)
400
V
Collector-Base Breakdown Voltage
BVCBO
IC=1mA, IB=0
800
V
Emitter-Base Breakdown Voltage
BVEBO
IE=1mA, IC=0
10
V
Collector Cutoff Current
ICBO
VCB=800V, IE=0
1
μA
Emitter Cutoff Current
IEBO
VEB=9V, IC=0
1
μA
ON CHARACTERISTICS
DC Current Gain
hFE1
VCE=5V, IC=10mA
10
hFE2
VCE=5V, IC=400mA
10
40
hFE3
VCE=5V, IC=1A
5
Collector-Emitter Saturation Voltage
VCE(SAT1) IC=0.5A, IB=0.1A (Note)
0.5
V
VCE(SAT2) IC=1A, IB=0.25A (Note)
1.1
1.5
Base-Emitter Saturation Voltage
VBE(SAT1) IC=0.5A, IB=0.1A (Note)
1.1
V
VBE(SAT2) IC=1A, IB=0.25A (Note)
1.2
SWITCHING CHARACTERISTICS
Turn On Time
tON
VCC=250V, IC=1A,
IB1=IB2=0.2A, tP=25uS
Duty Cycle<1%
0.15
0.3
μS
Fall Time
tF
0.2
0.4
μS
Storage Time
tSTG
0.5
0.9
μS
DIODE
Forward Voltage Drop
VF
IC=1A
1.4
V
Fall Time
tF
IC=1A
800
μS
Note: Pulsed duration = 300μS, Duty cycle≤2%



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