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BAS21L-AE3-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 BAS21L-AE3-R
상세설명  GENERAL PURPOSE DIODES
PDF  3 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

BAS21L-AE3-R 데이터시트(HTML) 2 Page - Unisonic Technologies

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BAS21
Preliminary
DIODE
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R601-040.a
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Repetitive Peak Reverse Voltage
VRRM
250
V
Continuous Reverse Voltage
VR
200
V
Continuous Forward Current (Note 1)
IF
200
mA
Repetitive Peak Forward Current
IFRM
625
mA
t=1µs
9
A
t=100µs
3
A
Non-Repetitive Peak Forward
Current (Square Wave,
TJ=25 °C Prior to Surge)
t=10ms
IFSM
1.7
A
Power Dissipation (TA=25°C) (Note 1)
PD
250
mW
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-65~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient (Note 1)
θJA
330
K/W
Note: 1. Device mounted on an FR4 printed-circuit board.
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
IF=100mA
1
V
Forward Voltage
VF
IF=200mA
1.25
V
VR=200V
100
nA
Reverse Current
IR
VR=200V, TJ=150°C
100
μA
Diode Capacitance
CD
f=1MHz, VR=0
5
pF
Reverse Recovery Time
TRR
when switched from IF=30mA to IR=30mA,
RL=100Ω, measured at IR=3mA
50
ns



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